IEEE - Institute of Electrical and Electronics Engineers, Inc. - EB-Writing n+self-aligned GaAs MESFETs for high-speed LSIs

Author(s): Yamasaki, K. ; Kato, N. ; Matsuoka, Y. ; Ohwada, K.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1982
Conference Location: San Francisco, CA, USA, USA
Conference Date: 13 December 1982
Page(s): 166 - 169
DOI: 10.1109/IEDM.1982.190242
Regular:

Electron-beam direct writing has been applied to the fabrication of n+self-aligned (SAINT) GaAs MESFETs for high speed LSIs in order to achieve very short gate length below a half... View More

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