IEEE - Institute of Electrical and Electronics Engineers, Inc. - High-voltage DMOS and PMOS in analog IC's

Author(s): Ludikhuize, A.W.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1982
Conference Location: San Francisco, CA, USA, USA
Conference Date: 13 December 1982
Page(s): 81 - 84
DOI: 10.1109/IEDM.1982.190218
Regular:

A lateral 300V DMOS device is described which can be integrated in a standard bipolar IC process. The device, applicable as a high voltage source follower for analog circuits, is based upon the... View More

Advertisement