IEEE - Institute of Electrical and Electronics Engineers, Inc. - U-groove isolation technique for high speed bipolar VLSI's

Author(s): Hayasaka, A. ; Tamaki, Y. ; Kawamura, M. ; Ogiue, K. ; Ohwaki, S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1982
Conference Location: San Francisco, CA, USA, USA
Conference Date: 13 December 1982
Page(s): 62 - 65
DOI: 10.1109/IEDM.1982.190212
Regular:

A new, buried dielectric isolation technique, called U-groove Isolation, has been developed. This U-Iso technique has led to a 66% reduction in bipolar device area, in isolation capacitance by a... View More

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