IEEE - Institute of Electrical and Electronics Engineers, Inc. - Experimental and theoretical results on fine-line p-channel MOSFETs

Author(s): Fichtner, W. ; Levin, R.M. ; Ng, K.K. ; Taylor, G.W.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1981
Conference Location: Washington, DC, USA, USA
Conference Date: 7 December 1981
Page(s): 546 - 549
DOI: 10.1109/IEDM.1981.190141
Regular:

We report results on p-channel MOSFETs with channel lengths as small as 0.5 µm. Using design criteria obtained from numerical simulation, the devices have been fabricated by a low temperature... View More

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