IEEE - Institute of Electrical and Electronics Engineers, Inc. - Ti/W silicide gate technology for self-aligned GaAs MESFET VLSIS

Author(s): Yokoyama, N. ; Ohnishi, T. ; Odani, K. ; Onodera, H. ; Abe, M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1981
Conference Location: Washington, DC, USA, USA
Conference Date: 7 December 1981
Page(s): 80 - 83
DOI: 10.1109/IEDM.1981.190004
Regular:

Ti/W mixed metal contacts on GaAs shows instable Schottky diode characteristics with short annealing cycles at temperatures higher than 750°C due to metallurgical reaction between Ti/W and GaAs.... View More

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