IEEE - Institute of Electrical and Electronics Engineers, Inc. - A New Model for Breakdown Limitations in Power MESFET's : Contribution to Device Optimization

Author(s): Wroblewski, R. ; Salmer, G.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 1981
Conference Location: Amsterdam, Netherlands, Netherlands
Conference Date: 7 September 1981
Page(s): 275 - 279
DOI: 10.1109/EUMA.1981.333025
Regular:

The channel avalanche breakdown in GaAs MESFET's has been investigated. It is due to the stationary high field domain which builds-up between the gate and drain. Various types of domain have been... View More

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