IEEE - Institute of Electrical and Electronics Engineers, Inc. - Fabrication and performance of InP MISFET

Author(s): Kawakami, T. ; Okamura, M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1980
Conference Location: Washington, DC, USA, USA
Conference Date: 8 December 1980
Page(s): 445 - 448
DOI: 10.1109/IEDM.1980.189862
Regular:

N-channel normally-off InP MISFETs for high-gain and high-speed application have been developed, using the following fabrication techniques: (1)Sulphur diffusion process into p- and... View More

Advertisement