IRE - Reactive ion etching for VLSI

International Electron Devices Meeting 1980

Author(s): L.M. Ephrath
Publisher: IRE
Publication Date: 1 January 1980
Conference Location: Washington, DC, USA, USA
Conference Date: 8 December 1980
Page(s): 402 - 404
DOI: 10.1109/IEDM.1980.189850
Regular:

The requirements of VLSI have lead to the development of etching techniques that are capable of transferring ever smaller dimension patterns into the various films that make up a device

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