IEEE - Institute of Electrical and Electronics Engineers, Inc. - Scaling properties of bipolar devices

Author(s): Ning, T.H. ; Tang, D.D. ; Solomon, P.M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1980
Conference Location: Washington, DC, USA, USA
Conference Date: 8 December 1980
Page(s): 61 - 64
DOI: 10.1109/IEDM.1980.189753
Regular:

The procedures for optimizing the vertical doping profile of bipolar transistors and for scaling bipolar switching circuits are discussed. A bipolar circuit remains optimized for power-delay... View More

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