IEEE - Institute of Electrical and Electronics Engineers, Inc. - Three-dimensional finite element simulation of semiconductor devices

1980 IEEE International Solid-State Circuits Conference

Author(s): E. Buturla ; P. Cottrell ; B. Grossman ; K. Salsburg ; M. Lawlor ; C. McMullen
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1980
Conference Location: San Francisco, CA, USA, USA
Conference Date: 13 February 1980
Volume: XXIII
Page(s): 76 - 77
DOI: 10.1109/ISSCC.1980.1156066
Regular:

Mobile carrier transport in semiconductors, simulated in three dimensions, using the finite element method, will be reported. The algorithm has been used to model the combined effect of short... View More

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