IEEE - Institute of Electrical and Electronics Engineers, Inc. - Characteristics of Low-Noise GaAs Mesfets from 300K to 20K

Author(s): Weinreb, S. ; Brookes, T. M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 1980
Conference Location: Warszawa, Poland, Poland
Conference Date: 8 September 1980
Page(s): 695 - 699
DOI: 10.1109/EUMA.1980.332784
Regular:

Measurements of the noise temperature and transconductance of a GaAs field-effect transistor at temperatures of 300K and 17K are reported as a function of drain current. These results are compared... View More

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