IEEE - Institute of Electrical and Electronics Engineers, Inc. - Design construction, and performance of high power RF VMOS devices

Author(s): Johnsen, R.J. ; Granberg, H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1979
Conference Location: Washington, DC, USA, USA
Conference Date: 3 December 1979
Page(s): 93 - 96
DOI: 10.1109/IEDM.1979.189548
Regular:

Silicon RF Power VMOS devices with gate widths of 65.3 cm and drain area of 8.51mm2have been designed and constructed. Gm to 6 mhos, Vdss of 150 volts, and Rdsat of .16 have been... View More

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