IEEE - Institute of Electrical and Electronics Engineers, Inc. - Model and performance of hot-electron MOS transistors for high-speed, low power LSI

Author(s): Hoefflinger, B. ; Sibbert, H. ; Zimmer, G. ; Kubalek, E. ; Menzel, E.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1978
Conference Location: Washigton, DC, USA, USA
Conference Date: 4 December 1978
Page(s): 463 - 467
DOI: 10.1109/IEDM.1978.189455
Regular:

An analytical model is presented for a MOS transistor, whose channel length L is so short that the product of L and the hot-electron critical field ECis smaller than the operating voltages. Static... View More

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