IEEE - Institute of Electrical and Electronics Engineers, Inc. - "The use, characterization, and reliability implications of vacuum deposited silicon nitride as a capacitor dielectric in integrated circuits"

Author(s): Roop, R.M. ; Saltich, J.L.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1978
Conference Location: Washigton, DC, USA, USA
Conference Date: 4 December 1978
Page(s): 456 - 459
DOI: 10.1109/IEDM.1978.189453
Regular:

This work discusses the implementation, characterization, and reliability aspects of a vacuum deposited silicon nitride film used as a capacitor dielectric in integrated circuits. Capacitors with... View More

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