IEEE - Institute of Electrical and Electronics Engineers, Inc. - Anodic oxidation of GaAs in oxygen plasma

Author(s): Sugano, T. ; Yamasaki, K.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1977
Conference Location: Washington, DC, USA, USA
Conference Date: 5 December 1977
Page(s): 600
DOI: 10.1109/IEDM.1977.189332
Regular:

This paper deals with the development of a new technology of forming an oxide film on GaAs. It can be used for surface passivation of GaAs or other compound semiconductor devices, for gate... View More

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