IEEE - Institute of Electrical and Electronics Engineers, Inc. - High speed I2L fabricated with electron-beam lithography and ion implantation

Author(s): Evans, S.A. ; Bartelt, J.L. ; Sloan, B.J. ; Varnell, G.L.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1977
Conference Location: Washington, DC, USA, USA
Conference Date: 5 December 1977
Page(s): 266 - 270
DOI: 10.1109/IEDM.1977.189228
Regular:

Integrated injection logic gates have been fabricated using electron-beam lithography and ion implantation. A factor of five reduction in gate area over conventional designs was achieved by using... View More

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