IEEE - Institute of Electrical and Electronics Engineers, Inc. - Design and Performance of Low Noise C -and X - Band GaAs FET Mixers

Author(s): Loriou, B. ; Leost, J.C.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 1977
Conference Location: Copenhagen, Denmark, Denmark
Conference Date: 5 September 1977
Page(s): 95 - 100
DOI: 10.1109/EUMA.1977.332409
Regular:

Different configurations of MESFET mixers are compared in the 6 GHz band for intermediate frequencies ranging from 30 MHz to 1.5 GHz. Conversion gain of 10 dB associated with 4 dB SSB noise figure... View More

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