IEEE - Institute of Electrical and Electronics Engineers, Inc. - Borsenic bipolar process

Author(s): Saraswat, K.C. ; Meindl, J.D.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1975
Conference Location: Washigton, DC, USA, USA
Conference Date: 1 December 1975
Page(s): 437 - 439
DOI: 10.1109/IEDM.1975.188916
Regular:

A new process utilizing simultaneous diffusion of Boron and Arsenic (Borsenic) from doped oxide, to fabricate high performance bipolar transistors has been developed. The doped oxide is deposited... View More

Advertisement