IEEE - Institute of Electrical and Electronics Engineers, Inc. - A simple etch contour for near ideal breakdown voltage in plane and planar p-n junctions

Author(s): Temple, V.A.K. ; Adler, M.S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1975
Conference Location: Washigton, DC, USA, USA
Conference Date: 1 December 1975
Page(s): 171 - 174
DOI: 10.1109/IEDM.1975.188852
Regular:

It is shown that high avalanche breakdown voltage in both plane and planar p-n junctions can be achieved by extending the heavily doped side of the junction beyond the contact and partially... View More

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