IEEE - Institute of Electrical and Electronics Engineers, Inc. - An n-channel mosfet process using high energy ion implanted boron for field and active device doping

1974 International Electron Devices Meeting (IEDM)

Author(s): Hanson, J.W. ; Huber, R.J. ; Fordemwalt, J.N.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1974
Conference Location: Washigton, DC, USA, USA
Conference Date: 9 December 1974
Page(s): 383 - 385
ISSN (Paper): 0163-1918
DOI: 10.1109/IEDM.1974.6219771
Regular:

This paper describes a 5 mask process (6 masks with overlay pyrolytic oxide) for fabricating aluminum-gate n-channel MOS circuits having enhancement and depletion devices, and which can operate... View More

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