IEEE - Institute of Electrical and Electronics Engineers, Inc. - Schottky-barrier diodes for electron-beam-semiconductor applications

Author(s): Siekanowicz, W.W. ; Huang, H. ; Enstrom, R.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1973
Conference Location: Washington, DC, USA, USA
Conference Date: 3 December 1973
Page(s): 520
DOI: 10.1109/IEDM.1973.188774
Regular:

Electron-beam-semiconductor (EBS) targets can be constructed from pn-junction or Schottky-barrier diodes. Most applications described so far have employed the first type of diode. This... View More

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