IEEE - Institute of Electrical and Electronics Engineers, Inc. - Use of anodic aluminum oxide in MOS structures

Author(s): Raymond, R.K. ; Das, M.B.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1973
Conference Location: Washington, DC, USA, USA
Conference Date: 3 December 1973
Page(s): 359 - 362
DOI: 10.1109/IEDM.1973.188729
Regular:

Aluminum oxide formed by a method of electrotytic anodization, which is compatible with the existing planar silicon technology, has been used to fabricate MOS-FET structures with and without an... View More

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