IEEE - Institute of Electrical and Electronics Engineers, Inc. - Theory of the M. O. S. transistor in weak inversion - new method to determine the number of surface states

Author(s): Van Overstraeten, R. ; Declerck, G. ; Muls, P. ; Broux, G.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1973
Conference Location: Washington, DC, USA, USA
Conference Date: 3 December 1973
Page(s): 346 - 349
DOI: 10.1109/IEDM.1973.188726
Regular:

The drain current IDversus gate voltage VGof a MOST operating in weak inversion, and the influence of surface potential fluctuations on this characteristic have been studied before [1] The purpose... View More

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