IEEE - Institute of Electrical and Electronics Engineers, Inc. - "Junction field effect transistor with the lower gate formed by a 3.5 MeV boron ion implantation"
|Author(s):||Colman, D. ; Stephen, J.|
|Publisher:||IEEE - Institute of Electrical and Electronics Engineers, Inc.|
|Publication Date:||1 January 1972|
|Conference Location:||Washington, DC, USA, USA|
|Conference Date:||4 December 1972|
|Page(s):||5 - 6|