IEEE - Institute of Electrical and Electronics Engineers, Inc. - "Junction field effect transistor with the lower gate formed by a 3.5 MeV boron ion implantation"

Author(s): Colman, D. ; Stephen, J.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1972
Conference Location: Washington, DC, USA, USA
Conference Date: 4 December 1972
Page(s): 5 - 6
DOI: 10.1109/IEDM.1972.249232
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