IEEE - Institute of Electrical and Electronics Engineers, Inc. - Ion implanted double-drift impatt diodes: Low-frequency noise

Author(s): Lee, D.H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1972
Conference Location: Washington, DC, USA, USA
Conference Date: 4 December 1972
Page(s): 86 - 88
DOI: 10.1109/IEDM.1972.249313
Regular:

The low-frequency open circuit noise spectral density, S(f) = 2>/Δf, of an avalanching junction can be represented by S(f) = a2VB2/Iowhere VB, Io, and... View More

Advertisement