IEEE - Institute of Electrical and Electronics Engineers, Inc. - Current-induced field enhancement of lateral transistors

Author(s): Long, E.L.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1970
Conference Location: Washington, DC, USA, USA
Conference Date: 28 October 1970
Page(s): 72 - 74
DOI: 10.1109/IEDM.1970.188266
Regular:

A new field-aided lateral p-n-p transistor structure has been developed for integrated circuits that has performance characteristics (hfeand fT) that significantly exceed those of the conventional... View More

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