IEEE - Institute of Electrical and Electronics Engineers, Inc. - Room Temperature Instabilities Observed on Silicon Gate Devices

Author(s): Faggin, F. ; Forsythe, D. D. ; Klein, T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 1970
Conference Location: Las Vegas, NV, USA, USA
Conference Date: 7 April 1970
Page(s): 35 - 41
ISSN (Paper): 0735-0791
DOI: 10.1109/IRPS.1970.362431
Regular:

A room temperature ionic instability has been observed on p-channel silicon gate MOS devices processed in a specific manner. This instability appears as a rapid and substantial change of threshold... View More

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