IEEE - Institute of Electrical and Electronics Engineers, Inc. - A thermally induced avalanche failure mechanism in GaAs Gunn devices

Author(s): Bravman, J.S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1969
Conference Location: Washington, DC, USA, USA
Conference Date: 29 October 1969
Page(s): 136
DOI: 10.1109/IEDM.1969.188187
Regular:

High duty cycle and CW Gunn effect epitaxial devices are subject to premature failure due to avalanching induced by temperature gradients produced across the active layer. These temperature... View More

Advertisement