IEEE - Institute of Electrical and Electronics Engineers, Inc. - Saturation of red Zn-O electroluminescence in gallium phosphide diodes

Author(s): Hackett, W.H., Jr.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1968
Conference Location: Washington, DC, USA, USA
Conference Date: 23 October 1968
Page(s): 94 - 96
DOI: 10.1109/IEDM.1968.188021
Regular:

Liquid-phase epitaxial n-type layers, grown on pieces from the same p-type solution-grown substrate (0.07m%Zn, 0.02m%Ga2O3in melt), with a variable tellurium concentration in the tipping charge,... View More

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