IEEE - Institute of Electrical and Electronics Engineers, Inc. - 200-Megabit pulsed-avalanche oscillation with Ge silver-bonded diode in 50-GHz region

1968 IEEE International Solid-State Circuits Conference

Author(s): Y. Fukatsu ; M. Ohmori
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1968
Conference Location: Philadelphia, PA, USA, USA
Conference Date: 14 February 1968
Volume: XI
Page(s): 154 - 155
DOI: 10.1109/ISSCC.1968.1154653
Regular:

The pulsed operation of an IMPATT diode at extremely high repetition rates of 200 Mbit is accompanied by two problems: (1)-the diode is apt to be destroyed as the operating condition becomes very... View More

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