IEEE - Institute of Electrical and Electronics Engineers, Inc. - Piezoresistive effect in inversion layers on silicon

Author(s): Mize, J.P. ; Colman, D.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1967
Conference Location: Washington, DC, USA, USA
Conference Date: 18 October 1967
Page(s): 22
DOI: 10.1109/IEDM.1967.187781
Regular:

The piezoresistive effect has been observed in the metal-oxide-silicon field effect transistor (MOSFET). Hall measurements show that the piezoresistive effect in the inversion layer of the device... View More

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