IEEE - Institute of Electrical and Electronics Engineers, Inc. - Monolithic MOS complementary pairs

Author(s): Yagura, K.K. ; Catlin, G.M. ; Hutchenson, J.D.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1966
Conference Location: Washington, DC, USA, USA
Conference Date: 26 October 1966
Page(s): 64
DOI: 10.1109/IEDM.1966.187690
Regular:

This paper describes the fabrication of stable, monolithic, enhancement-mode, N and P-channel MOS transistors (N-MOST's and P-MOST's). In recent years, stable, discrete N-MOST's and P-MOST's have... View More

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