IEEE - Institute of Electrical and Electronics Engineers, Inc. - Diffusion Studies on Stressed Tantalum-Tantalum Oxide Capacitors

Second Annual Symposium on the Physics of Failure in Electronics

Author(s): Neva Johnson ; Kenneth Greenough
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 1963
Conference Location: Chicago, IL, USA, USA
Conference Date: 25 September 1963
Page(s): 103 - 123
ISSN (Paper): 0097-2088
DOI: 10.1109/IRPS.1963.362240
Regular:

Tantalum films, 3000 angstroms thick, evaporated on fused-quartz substrates and activated by neutron irradiation, were anodized at 82 volts to form an oxide layer of approximately 1600 angstroms.... View More

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