IEEE - Institute of Electrical and Electronics Engineers, Inc. - A new class of devices based on stressed single and multiple junctions

Author(s): Rindner, W. ; Nelson, R.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1962
Conference Location: Washington, DC, USA, USA
Conference Date: 25 October 1962
Page(s): 100
DOI: 10.1109/IEDM.1962.187346
Regular:

Recent investigations have shown that stress suitably applied over small areas of p-n junctions causes very large and reversible changes in junction resistance. The active semiconductor volume... View More

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