IEEE - Institute of Electrical and Electronics Engineers, Inc. - Epitaxial semiconductor devices

Author(s): Early, J.M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1960
Conference Location: Washington, DC, USA, USA
Conference Date: 27 October 1960
Page(s): 20
DOI: 10.1109/IEDM.1960.187158
Regular:

The ability to grow epitaxial films of germanium and silicon on substrates of these materials permits major improvements in the performance of semiconductor devices. In this paper the design of... View More

Advertisement