IEEE - Institute of Electrical and Electronics Engineers, Inc. - A high gain silicon photodetector

Author(s): S.W. Ing, Jr. ; G.C. Gerhard
Sponsor(s): IEEE Publication
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 1965
Volume: 53
Page(s): 1,714 - 1,722
ISSN (Paper): 0018-9219
ISSN (Online): 1558-2256
DOI: 10.1109/PROC.1965.4344
Regular:

High gain silicon photodetectors were designed and fabricated using a sandwich structure of gold compensated n-type material. Steady-state photoconductive current gains as high as 26 were... View More

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