IEEE - Institute of Electrical and Electronics Engineers, Inc. - Permalloy film NDRO memory

Author(s): F. Janisch
Sponsor(s): IEEE Magnetics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1965
Volume: 1
Page(s): 266 - 271
ISSN (Paper): 0018-9464
ISSN (Online): 1941-0069
DOI: 10.1109/TMAG.1965.1062997
Regular:

A thin magnetic film NDRO storage cell has been developed for very high-speed word-organized memories. The storage cell contains two 500-Å, 15-mil-square Permalloy film elements with a read and... View More

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