IEEE - Institute of Electrical and Electronics Engineers, Inc. - Electron-Induced Single-Event Upsets in 45-nm and 28-nm Bulk CMOS SRAM-Based FPGAs Operating at Nominal Voltage

Author(s): Matthew J. Gadlage ; Austin H. Roach ; Adam R. Duncan ; Mark W. Savage ; Matthew J. Kay
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2015
Volume: 62
Page Count: 8
Page(s): 2,717 - 2,724
ISSN (Paper): 0018-9499
ISSN (Online): 1558-1578
DOI: 10.1109/TNS.2015.2491220
Regular:

Electron-induced single-event upsets (SEUs) are observed in 45-nm and 28-nm bulk complementary metal-oxide semiconductor static random-access memory-based field-programmable gate arrays (FPGAs)... View More

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