IEEE - Institute of Electrical and Electronics Engineers, Inc. - RF Small-Signal and Noise Modeling Including Parameter Extraction of Nanoscale MOSFET From Weak to Strong Inversion

Author(s): Maria-Anna Chalkiadaki ; Christian C. Enz
Sponsor(s): IEEE Microwave Theory and Techniques Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2015
Volume: 63
Page Count: 12
Page(s): 2,173 - 2,184
ISSN (Paper): 0018-9480
ISSN (Online): 1557-9670
DOI: 10.1109/TMTT.2015.2429636
Regular:

The downscaling of CMOS processes has led to devices with an impressive RF performance. Advanced nanoscale RF MOSFETs present very high transit frequency, which can be traded off with lower power... View More

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