IEEE - Institute of Electrical and Electronics Engineers, Inc. - Electric Field Assisted Switching in Magnetic Random Access Memory

Author(s): Guchang Han ; Jiancheng Huang ; Bingjin Chen ; Sze Ter Lim ; Michael Tran
Sponsor(s): IEEE Magnetics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2015
Volume: 51
Page(s): 1 - 7
ISSN (Paper): 0018-9464
ISSN (Online): 1941-0069
DOI: 10.1109/TMAG.2015.2439734
Regular:

Electric field (EF)-assisted magnetization reversal is investigated in both top-pinned and bottom-pinned CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs). EF modulation in coercivity... View More

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