IEEE - Institute of Electrical and Electronics Engineers, Inc. - Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs

Author(s): William M. Waller ; Serge Karboyan ; Michael J. Uren ; Kean Boon Lee ; Peter A. Houston ; David J. Wallis ; Ivor Guiney ; Colin J. Humphreys ; Martin Kuball
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2015
Volume: 62
Page(s): 2,464 - 2,469
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2015.2444911
Regular:

Dispersion in capacitance and conductance measurements in AlGaN/GaN high-electron mobility transistors is typically interpreted as resulting from interface states. Measurements on varying... View More

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