IEEE - Institute of Electrical and Electronics Engineers, Inc. - Asymmetric Dual-Spacer Trigate FinFET Device-Circuit Codesign and Its Variability Analysis

Author(s): Pankaj Kumar Pal ; Brajesh Kumar Kaushik ; Sudeb Dasgupta
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2015
Volume: 62
Page(s): 1,105 - 1,112
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2015.2400053
Regular:

High-k spacer materials have been extensively studied nowadays for the enhancement of electrostatic control and suppression of short-channel effects in nanoscaled devices. However, the exorbitant... View More

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