IEEE - Institute of Electrical and Electronics Engineers, Inc. - Analysis on the Light-Extraction Efficiency of GaN-Based Light-Emitting Diodes With Deep-Hole Amorphous Photonic Crystals Structures

Author(s): Qingyang Yue ; Kang Li ; Fanmin Kong ; Jia Zhao ; Qingan Ding
Sponsor(s): IEEE Lasers and Electro-Optics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2014
Volume: 10
Page Count: 8
Page(s): 1,070 - 1,077
ISSN (Paper): 1551-319X
ISSN (Online): 1558-9323
DOI: 10.1109/JDT.2014.2342272
Regular:

We demonstrated that amorphous photonic crystals can effectively improve the light extraction efficiency of GaN-based light-emitting diodes (LEDs) by the Anderson localization effect. The... View More

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