IEEE - Institute of Electrical and Electronics Engineers, Inc. - Source-Gated Transistors for Power- and Area-Efficient AMOLED Pixel Circuits

Author(s): Xiaoli Xu ; Radu A. Sporea ; Xiaojun Guo
Sponsor(s): IEEE Lasers and Electro-Optics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2014
Volume: 10
Page Count: 6
Page(s): 928 - 933
ISSN (Paper): 1551-319X
ISSN (Online): 1558-9323
DOI: 10.1109/JDT.2013.2293181
Regular:

In this work, the source-gated transistor (SGT) structure is proposed for implementation of the driving transistor in active-matrix organic light-emitting diode (AMOLED) display pixel circuits.... View More

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