IEEE - Institute of Electrical and Electronics Engineers, Inc. - Modeling and High-Frequency Simulation of InAs Nanowires

Author(s): Bogdan Popescu ; Dan Popescu ; Paolo Lugli
Sponsor(s): IEEE Nanotechnology Council
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2014
Volume: 13
Page(s): 850 - 856
ISSN (Paper): 1536-125X
ISSN (Online): 1941-0085
DOI: 10.1109/TNANO.2014.2328435
Regular:

In this paper, we have investigated the transport in InAs nanowire-based wrap gate field-effect transistors and their high-frequency performance. State-of-the-art InAs devices reveal excellent dc... View More

Advertisement