IEEE - Institute of Electrical and Electronics Engineers, Inc. - Evaluation of SiC JFET Performance During Repetitive Pulsed Switching Into an Unclamped Inductive Load

Author(s): Bejoy N. Pushpakaran ; Miguel Hinojosa ; Stephen B. Bayne ; Victor Veliadis ; Damian Urciuoli ; Nabil El-Hinnawy ; Pavel Borodulin ; Shalini Gupta ; Charles Scozzie
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2014
Volume: 42
Page(s): 2,968 - 2,973
ISSN (Electronic): 1939-9375
ISSN (Paper): 0093-3813
DOI: 10.1109/TPS.2014.2309273
Regular:

Silicon carbide (SiC) depletion mode junction field-effect transistors (JFETs) are well suited for pulsed power applications as an opening switch due to their normally ON (N-ON) nature. To assess... View More

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