IEEE - Institute of Electrical and Electronics Engineers, Inc. - Germanane: A Low Effective Mass and High Bandgap 2-D Channel Material for Future FETs

Author(s): Ram Krishna Ghosh ; Madhuchhanda Brahma ; Santanu Mahapatra
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2014
Volume: 61
Page(s): 2,309 - 2,315
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2014.2325136
Regular:

We investigate the electronic properties of Germanane and analyze its importance as 2-D channel material in switching devices. Considering two types of morphologies, namely, chair and boat, we... View More

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