IEEE - Institute of Electrical and Electronics Engineers, Inc. - THz Hot-Electron Micro-Bolometer Based on Low-Mobility 2-DEG in GaN Heterostructure

Author(s): Jae Kyu Choi ; V. Mitin ; R. Ramaswamy ; V. A. Pogrebnyak ; M. P. Pakmehr ; A. Muravjov ; M. S. Shur ; J. Gill ; I. Mehdi ; B. S. Karasik ; A. V. Sergeev
Sponsor(s): IEEE Sensors Council
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2013
Volume: 13
Page Count: 9
Page(s): 80 - 88
ISSN (Paper): 1530-437X
ISSN (Online): 1558-1748
DOI: 10.1109/JSEN.2012.2224334
Regular:

We present the results on design, fabrication, and characterization of a hot-electron bolometer based on low-mobility 2-D electron gas (2-DEG) in an AlGaN/GaN heterostructure. The characterization... View More

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