IEEE - Institute of Electrical and Electronics Engineers, Inc. - Highly Scalable Horizontal Channel 3-D NAND Memory Excellent in Compatibility With Conventional Fabrication Technology

Author(s): Kiwamu Sakuma ; Haruka Kusai ; Shosuke Fujii ; Masato Koyama
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2013
Volume: 34
Page Count: 3
Page(s): 1,142 - 1,144
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2013.2274472
Regular:

We developed a stacked horizontal channel type floating gate (HC-FG) NAND memory; a 3-D stacked NAND array composed of conventional FG cells. With this cell structure, a wide program/erase (P/E)... View More

Advertisement