IEEE - Institute of Electrical and Electronics Engineers, Inc. - Electromechanical Transconductance Properties of a GaN MEMS Resonator With Fully Integrated HEMT Transducers

Author(s): M. Faucher ; Y. Cordier ; M. Werquin ; L. Buchaillot ; C. Gaquiere ; D. Theron
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2012
Volume: 21
Page Count: 9
Page(s): 370 - 378
ISSN (Paper): 1057-7157
ISSN (Online): 1941-0158
DOI: 10.1109/JMEMS.2011.2179010
Regular:

We investigate the response of a GaN microelectromechanical resonator where the strain detection is performed by a resonant high-electron mobility transistor (R-HEMT). The R-HEMT gate... View More

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